參數(shù)資料
型號: MCM69F819TQ11
廠商: MOTOROLA INC
元件分類: DRAM
英文描述: 256K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
中文描述: 512K X 9 CACHE SRAM, 11 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 2/16頁
文件大?。?/td> 175K
代理商: MCM69F819TQ11
MCM69F817
10
MOTOROLA FAST SRAM
(b) Pull–Up for 2.5 V I/O Supply
(c) Pull–Down for 3.3 V and 2.5 V I/O Supply
VOLTAGE (V)
PULL–UP
I (mA) MIN
I (mA) MAX
– 0.5
0
0.8
1.25
1.5
2.3
2.7
2.9
– 26
– 18
– 14
0
– 75
– 58
– 49
– 21
– 7
0
Figure 4. Typical Output Buffer Characteristics
2.9
2.5
2.3
2.1
1.25
0.8
0
– 26
– 75
CURRENT (mA)
VOL
TAGE
(V)
VDD
1.8
1.65
0.3
0
46
120
CURRENT (mA)
VOL
TAGE
(V)
VOLTAGE (V)
PULL–DOWN
I (mA) MIN
I (mA) MAX
– 0.5
0
0.5
1
1.65
1.8
3.6
4
– 34
0
17
35
45
46
– 126
0
47
90
114
120
(a) Pull–Up for 3.3 V I/O Supply
VOLTAGE (V)
PULL–UP
I (mA) MIN
I (mA) MAX
– 0.5
0
1.4
1.65
2.0
3.135
3.6
– 40
– 37
– 28
0
– 120
– 104
– 81
– 20
0
3.135
2.8
1.65
1.4
0
0– 40
CURRENT (mA)
VOL
TAGE
(V)
3.6
– 120
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參數(shù)描述
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