參數(shù)資料
型號(hào): MCM69F819TQ11
廠商: MOTOROLA INC
元件分類: DRAM
英文描述: 256K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
中文描述: 512K X 9 CACHE SRAM, 11 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 16/16頁
文件大?。?/td> 175K
代理商: MCM69F819TQ11
MCM69F817
9
MOTOROLA FAST SRAM
OUTPUT
Z0 = 50
RL = 50
1.5 V
Figure 2. AC Test Load
2.4
INPUT
WAVEFORM
tr
TEST POINT
OUTPUT
BUFFER
2.4
0.4
OUTPUT
WAVEFORM
OUTPUT LOAD
tf
UNLOADED RISE AND FALL TIME MEASUREMENT
NOTES:
1. Input waveform has a slew rate of 1 V/ns.
2. Rise time is measured from 0.4 to 2.4 V unloaded.
3. Fall time is measured from 2.4 to 0.4 V unloaded.
Figure 3. Unloaded Rise and Fall Time Characterization
2.4
0.4
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