- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄354437 > MCM69D618 (Motorola, Inc.) 64K x 18 Bit Synchronous Dual I/O, Dual Address SRAM PDF資料下載
參數(shù)資料
| 型號： | MCM69D618 |
| 廠商： | Motorola, Inc. |
| 英文描述： | 64K x 18 Bit Synchronous Dual I/O, Dual Address SRAM |
| 中文描述： | 64K的× 18位同步雙的I / O，雙地址的SRAM |
| 文件頁數(shù)： | 13/16頁 |
| 文件大小： | 175K |
| 代理商： | MCM69D618 |
MCM69F817
6
MOTOROLA FAST SRAM
ABSOLUTE MAXIMUM RATINGS (See Note 1)
Rating
Symbol
Value
Unit
Power Supply Voltage
VDD
VSS – 0.5 to + 4.6
V
I/O Supply Voltage (See Note 2)
VDDQ
VSS – 0.5 to VDD
V
Input Voltage Relative to VSS for Any
Pin Except VDD (See Note 2)
Vin, Vout
VSS – 0.5 to
VDD + 0.5
V
Input Voltage (Three–State I/O)
(See Note 2)
VIT
VSS – 0.5 to
VDDQ + 0.5
V
Output Current (per I/O)
Iout
± 20
mA
Package Power Dissipation (See Note 3)
PD
1.6
W
Temperature Under Bias
Tbias
– 10 to 85
°C
Storage Temperature
Tstg
– 55 to 125
°C
NOTES:
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for extended
periods of time could affect device reliability.
2. This is a steady–state DC parameter that is in effect after the power supply has
achieved its nominal operating level. Power sequencing can not be controlled and
is not allowed.
3. Power dissipation capability is dependent upon package characteristics and use
environment. See Package Thermal Characteristics.
PACKAGE THERMAL CHARACTERISTICS — PBGA
Rating
Symbol
Max
Unit
Notes
Junction to Ambient (@ 200 lfm)
Single Layer Board
Four Layer Board
R
θJA
41
19
°C/W
1, 2
Junction to Board (Bottom)
R
θJB
11
°C/W
3
Junction to Case (Top)
R
θJC
19
°C/W
4
NOTES:
1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient
temperature, air flow, board population, and board thermal resistance.
2. Per SEMI G38–87.
3. Indicates the average thermal resistance between the die and the printed circuit board.
4. Indicates the average thermal resistance between the die and the case top surface via the cold plate method (MIL SPEC–883 Method 1012.1).
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to this high–impedance
circuit.
相關PDF資料 |
PDF描述 |
|---|---|
| MCM69D618TQ6 | 64K x 18 Bit Synchronous Dual I/O, Dual Address SRAM |
| MCM69D618TQ6R | 64K x 18 Bit Synchronous Dual I/O, Dual Address SRAM |
| MC68HC05E16CFB | 16256 bytes of user ROM, 320bytes of EPROM and 352 bytes of RAM |
| MCM69P817ZP3 | 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM69P818ZP4 | 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MCM69D618TQ6 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 18 Bit Synchronous Dual I/O, Dual Address SRAM |
| MCM69D618TQ6R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 18 Bit Synchronous Dual I/O, Dual Address SRAM |
| MCM69D618TQ8 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 18 Bit Synchronous Dual I/O, Dual Address SRAM |
| MCM69D618TQ8R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 18 Bit Synchronous Dual I/O, Dual Address SRAM |
| MCM69F536C | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。