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  • 參數(shù)資料
    型號: DSPIC30F5011T-30I/PTG
    廠商: Microchip Technology
    文件頁數(shù): 65/66頁
    文件大?。?/td> 0K
    描述: IC DSPIC MCU/DSP 66K 64TQFP
    標(biāo)準(zhǔn)包裝: 1,200
    系列: dsPIC™ 30F
    核心處理器: dsPIC
    芯體尺寸: 16-位
    速度: 30 MIP
    連通性: CAN,I²C,SPI,UART/USART
    外圍設(shè)備: AC'97,欠壓檢測/復(fù)位,I²S,LVD,POR,PWM,WDT
    輸入/輸出數(shù): 52
    程序存儲器容量: 66KB(22K x 24)
    程序存儲器類型: 閃存
    EEPROM 大?。?/td> 1K x 8
    RAM 容量: 4K x 8
    電壓 - 電源 (Vcc/Vdd): 2.5 V ~ 5.5 V
    數(shù)據(jù)轉(zhuǎn)換器: A/D 16x12b
    振蕩器型: 內(nèi)部
    工作溫度: -40°C ~ 85°C
    封裝/外殼: 64-TQFP
    包裝: 帶卷 (TR)
    其它名稱: DSPIC30F5011T30I
    dsPIC30F Flash Programming Specification
    DS70102K-page 8
    2010 Microchip Technology Inc.
    5.5.3
    PROGRAMMING VERIFICATION
    Once code memory is programmed, the contents of
    memory can be verified to ensure that programming
    was successful. Verification requires code memory to
    be read back and compared against the copy held in
    the programmer’s buffer.
    The READP command can be used to read back all the
    programmed code memory.
    Alternatively, you can have the programmer perform
    the verification once the entire device is programmed
    using a checksum computation, as described in
    5.6
    Data EEPROM Programming
    5.6.1
    OVERVIEW
    The panel architecture for the data EEPROM memory
    array consists of 128 rows of sixteen 16-bit data words.
    Each panel stores 2K words. All devices have either
    one or no memory panels. Devices with data EEPROM
    provide either 512 words, 1024 words or 2048 words of
    memory on the one panel (see Table 5-3).
    TABLE 5-3:
    DATA EEPROM SIZE
    Device
    Data EEPROM
    Size (Words)
    Number of
    Rows
    dsPIC30F2010
    512
    32
    dsPIC30F2011
    0
    dsPIC30F2012
    0
    dsPIC30F3010
    512
    32
    dsPIC30F3011
    512
    32
    dsPIC30F3012
    512
    32
    dsPIC30F3013
    512
    32
    dsPIC30F3014
    512
    32
    dsPIC30F4011
    512
    32
    dsPIC30F4012
    512
    32
    dsPIC30F4013
    512
    32
    dsPIC30F5011
    512
    32
    dsPIC30F5013
    512
    32
    dsPIC30F5015
    512
    32
    dsPIC30F5016
    512
    32
    dsPIC30F6010
    2048
    128
    dsPIC30F6010A
    2048
    128
    dsPIC30F6011
    1024
    64
    dsPIC30F6011A
    1024
    64
    dsPIC30F6012
    2048
    128
    dsPIC30F6012A
    2048
    128
    dsPIC30F6013
    1024
    64
    dsPIC30F6013A
    1024
    64
    dsPIC30F6014
    2048
    128
    dsPIC30F6014A
    2048
    128
    dsPIC30F6015
    2048
    128
    5.6.2
    PROGRAMMING METHODOLOGY
    The programming executive uses the PROGD command
    to program the data EEPROM. Figure 5-4 illustrates
    the flowchart of the process. Firstly, the number of rows
    to program (RemainingRows) is based on the device
    size, and the destination address (DestAddress) is set
    to ‘0’. In this example, 128 rows (2048 words) of data
    EEPROM will be programmed.
    The first PROGD command programs the first row of
    data EEPROM. Once the command completes
    successfully, ‘RemainingRows’ is decremented by 1
    and compared with 0. Since there are 127 more rows
    to program, ‘BaseAddress’ is incremented by 0x20 to
    point to the next row of data EEPROM. This process is
    then repeated until all 128 rows of data EEPROM are
    programmed.
    FIGURE 5-4:
    FLOWCHART FOR
    PROGRAMMING
    dsPIC30F6014A DATA
    EEPROM
    Is
    PROGD response
    PASS?
    Is
    RemainingRows
    0?
    Remaining Rows = 128
    BaseAddress = 0
    RemainingRows =
    RemainingRows – 1
    Finish
    BaseAddress =
    BaseAddress
    No
    Yes
    + 0x20
    Start
    Send
    PROGD
    Command with
    BaseAddress
    Failure
    Report Error
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