參數(shù)資料
型號(hào): 2SK2507
元件分類: JFETs
英文描述: 25 A, 50 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SC-67, 3 PIN
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 419K
代理商: 2SK2507
2SK2507
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
A
Drain cutoff current
IDSS
VDS = 50 V, VGS = 0 V
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
50
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
VGS = 4 V, ID = 6 A
0.058
0.08
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 12 A
0.034
0.046
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 12 A
8.0
16
S
Input capacitance
Ciss
900
Reverse transfer capacitance
Crss
130
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
370
pF
Rise time
tr
15
Turnon time
ton
25
Fall time
tf
30
Switching time
Turnoff time
toff
110
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
25
Gatesource charge
Qgs
19
Gatedrain (“miller”) charge
Qgd
VDD ≈ 40 V, VGS = 10 V, ID = 25 A
6
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
25
A
Pulse drain reverse current
(Note 1)
IDRP
75
A
Forward voltage (diode)
VDSF
IDR = 25 A, VGS = 0 V
1.6
V
Reverse recovery time
trr
60
ns
Reverse recovery charge
Qrr
IDR = 25 A, VGS = 0 V, dIDR / dt = 50 A / s
45
C
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K2507
Part No. (or abbreviation code)
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