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參數(shù)資料
| 型號： | SI4425BDY |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 30-V (D-S) MOSFET |
| 中文描述： | P溝道30V的MOSFET |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 53K |
| 代理商： | SI4425BDY |
Si4425BDY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72000
S-21862
—
Rev. B, 21-Oct-02
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 A
-1.0
-3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20
V
100
nA
V
DS
= -24 V, V
GS
= 0 V
-1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -24 V, V
GS
= 0 V, T
J
= 55 C
-5
A
On-State Drain Current
a
I
D(on)
V
DS
-5 V, V
GS
= -10 V
-50
A
V
GS
= -10 V, I
D
= -11.4 A
0.010
0.012
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -4.5 V, I
D
= -9.1 A
0.015
0.019
Forward Transconductance
a
g
fs
V
DS
= -15
V, I
D
= -11.4 A
29
S
Diode Forward Voltage
a
V
SD
I
S
= -2.5 A, V
GS
= 0 V
-0.8
-1.2
V
Dynamic
b
Total Gate Charge
Q
g
64
100
Gate-Source Charge
Q
gs
V
DS
= -15 V,
V
GS
= -10 V, I
D
= -11.4 A
11
nC
Gate-Drain Charge
Q
gd
17
Turn-On Delay Time
t
d(on)
15
25
Rise Time
t
r
V
= -15 V, R
= 15
-1 A, V
GEN
= -10 V, R
G
= 6
13
20
Turn-Off Delay Time
t
d(off)
I
D
100
150
ns
Fall Time
t
f
53
80
Source-Drain Reverse Recovery Time
t
rr
I
F
= -2.5 A, di/dt = 100 A/ s
41
80
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
50
0
1
2
3
4
5
0
10
20
30
40
50
0
1
2
3
4
5
V
GS
= 10 thru 5 V
T
C
= 125 C
-55 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
4 V
3 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4425BDY-E3 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N |
| SI4425BDY-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R |
| SI4425BDY-T1-E3 | 功能描述:MOSFET 30V 11A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4425BDY-T1-E3 | 制造商:Vishay Siliconix 功能描述:P CH MOSFET |
| SI4425BDY-T1-GE3 | 功能描述:MOSFET 30V 11.4A 2.5W 12mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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